Idizayini entsha ye-GaN PD 33W ishaja yesixhumi esibonakalayo yohlobo C olulodwa
I-SpecificATIONFORVROVAL
Igama Lomkhiqizo: I-GaN PD33W ( Imbobo yohlobo C)
Inombolo Model:GaN-009
UHLOBO LE-PLUG
Uhlobo lwepulaki ye-AU
Uhlobo lwepulaki ye-EU
Uhlobo lwepulaki ye-JP
Uhlobo lwepulaki yase-UK
1.Ububanzi
Le shaja ye-GaN-009 gallium nitride ithatha isixhumi esibonakalayo se-TYPE-C, amandla aphezulu angu-33W, futhi okukhiphayo
USB-C:5V⎓3A,9V⎓3A,12V⎓2.5A,15V⎓2A,20V⎓1.5A
(PPS)3.3-11V⎓3A,3.3-16V⎓2A
Ukubonakala komkhiqizo kulula futhi kunhle.
2.Umdwebo wokubukeka komkhiqizo
3.Imininingwane kagesi yomkhiqizo
3.1.Izimpawu zokokufaka kwe-AC
3.1.1.I-voltage yokufaka nebanga lefrikhwensi
| vumela okokufaka | |
| I-Voltage (V) | 100-240 |
| imvamisa (Hz) | 50/60 |
3.1.2 Izimpawu Zokufaka
Ukusetshenziswa kwamandla okungalayishi:≤0.1W
Ukulayisha okugcwele kwamanje okokufaka kwe-AC:≤0.85A
3.2.Izici zomphumela
| Itheku | I-voltage engalayishiwe | I-voltage yokulayisha egcwele | Okukhiphayo okwamanje |
| I-USB-C | 5.1V±5% | 4.37±5% | 3A |
| 9.1V±5% | 8.37±5% | 3A | |
| 12.1V±5% | 11.49±5% | 2.5A | |
| 15.1V±5% | 14.62±5% | 2A | |
| 20.1V±5% | 19.74±5% | 1.5A |
3.3.I-Inrush current (isiqalo esibandayo)
I-inrush current yokuqala ebandayo ingaphakathi kuka-30A.Ngeke kube khona ukulimala okungapheli kokuphakelwa kukagesi noma umthelela ekuzinzeni ngaphansi kwezimo ezibandayo noma ezifudumele zokuqala.Ukuhlolwa kokuthobelana kuzokwenziwa ku-+12.5% we-voltage yokufaka elinganiselwe.Uma iswishi yamandla yangaphandle icishiwe, i-voltage kanye namagagasi amanje azovezwa ku-oscilloscope.Ukucisha kweswishi kuzophindwa kuze kube yilapho amagagasi ekhombisa ukuthi i-waveform yokucisha ifana nokwehla kwamandla kagesi.I-current elinganisiwe ngalesi sikhathi ichazwa njengobuningi bamanje bokushesha.
3.4.Isixhumi Sokukhiphayo
UHLOBO-C
3.5.Iphrothokholi yokushaja
| I-USB-C |
|
3.6.Ripple kanye Noise
| Isiteshi sokuphuma kwe-DC | +5V,3A |
| I-Ripple Noise(mVp-p) | ≤100mV |
1. Sebenzisa ukuhlolwa kwe-oscilloscope komkhawulokudonsa ongu-20MHz;
2. Ngesikhathi sokulinganisa, xhuma i-ceramic capacitor engu-0.1µF kanye ne-electrolytic capacitor engu-10µF ngokuhambisana phakathi kwetheminali yokukhiphayo nomhlabathi.
3.7.Ukusebenza kahle kwamandla
Ngaphansi kwesimo sokufaka esingu-220V/50Hz:
Uma amandla okukhipha amandla angu-100%, ukusebenza kahle kwayo yonke ishaja kungu-≥85%.
3.8.Umsebenzi wokuvikela
3.8.1 I-OCP yokuphumayo (Ngaphezu kokuvikela kwamanje)
Uma umkhawulo wamanje wokuphumayo okungu-5V udlula u-3.3A, ukuvikelwa kokunikezwa kwamandla (ukuvikelwa kwe-hiccup)
3.8.2 OTP (Ukuvikelwa ngaphezu kwezinga lokushisa)
Ngaphansi kwezinga lokushisa eliphakeme ngokwedlulele, lapho izinga lokushisa le-chip lidlula u-150°, ukunikezwa kwamandla akunawo okukhiphayo (hiccup)
3.8.3.Ukuvikelwa kwesekethe emfushane okukhiphayo
Okukhiphayo kwe-DC kufanele kube nesivikelo sesekhethi emfishane.Ukunikezwa kwamandla ngeke kubangele noma yimuphi umonakalo ngenxa ye-short-circuit ephumayo.Uma iphutha le-short-circuit lisusiwe, ukunikezwa kwamandla kuzobuyela ngokuzenzakalela kokujwayelekile.
3.9.Ukuphepha kwe-insulation
Amandla kagesi aphezulu 3000Vac 50Hz 60S≤10mA
3.10.Indawo yokusebenza
Umkhiqizo ulungele izindawo ezinobude obungu-2000m nangaphansi
3.11.izinga lokushisa lokusebenza
Imikhiqizo elungele ukusetshenziswa ezindaweni ezingezona ezishisayo
3.12.Izinga lokushisa lesitoreji
-40℃～+80℃
3.13.Umswakama osebenzayo
10%~90%
3.14.Umswakama wesitoreji
10%~90%
3.15.PCB umdwebo
4.Imininingwane yesakhiwo somkhiqizo
4.1. Ukubuka okuthathu komkhiqizo
4.2.Izinto zegobolondo leshaja yangaphandle
I-PC V0 impahla engashi
4.3.Drop test
Umkhiqizo awupakishwanga, futhi umkhiqizo wehliswa usuka endaweni ephakeme engu-1000mm ngaphandle kokukhanyisa, futhi uwukuhlolwa kokuwa kwamahhala phansi kukasimende ngebhodi lamapulangwe elingu-20mm.Ubuso obuyisithupha, amaconsi ama-2 ebusweni ngabunye.Ngemva kokuhlolwa, ukusebenza kukagesi kuyahlolwa, futhi ishaja ayinazo izici ezingavamile.
4.4.Isisindo sokunikezwa kwamandla
cishe 70g
5.Ukuhambisana kwe-electromagnetic
Ukuthobela i-GB9254-2008 ejwayelekile
